ULBM25 Datasheet PDF | Advanced Semiconductor

Advanced Semiconductor ULBM25

ULBM25 is Designed for PACKAGE STYLE .500 6L FLG FEATURES: • • • Omnigold™ Metalization System D C A 2x ØN FULL R B E .725/18,42 F K M L MAXIMUM inches / mm MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O G 4.8 A 36 V 16 V 36 V 4.0 V 70 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 2.5 OC/W O DIM A B C D E F G H I J K L M N H MINIMUM inches / mm J I .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 /...

Part No.	ULBM25
Datasheet	ULBM25 Download
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Buy	Stock & Price

DESCRIPTION

: The ASI ULBM25 is Designed for PACKAGE STYLE .500 6L FLG

FEATURES

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● Omnigold™ Metalization System D C A 2x ØN FULL R B E .725/18,42 F K M L MAXIMUM inches / mm

MAXIMUM RATINGS

IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O G 4.8 A 36 V 16 V 36 V 4.0 V 70 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 2.5 OC/W O DIM A B C D E F G H I J K L M N H MINIMUM inches / mm J I .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .120 / 3.05 .135 / 3.43 ORDER CODE: ASI10683 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICES hFE COB PG ηC IC = 50 mA IC = 10 mA TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 16 36 4.0 5 UNITS V V V mA --pF dB IE = 5.0 mA VCE = 12.5 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V POUT = 25 W IC = 1.0 A f = 1.0 MHz f = 470 MHz 10 --80 6.5 60 % A D V A N C E D S E M I C O N D U C T O R, I N C.