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VMB10-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VMB10-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A Ø.125 NOM. FULL R J .125
FEATURES:
• • • Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
C D F E I GH
2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 5.0 OC/W
O
DIM A B C D E F G H I J
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84
.730 / 18.54 .980 / 24.89 .385 / 9.78
.004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10
.006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.