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VMB10-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VMB10-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
• • • Omnigold™ Metalization System
B
ØC
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
D
H
I J
2.0 A
#8-32 UNC-2A
G F E
36 V 18 V
DIM MINIMUM
inches / mm
MAXIMUM
inches / mm
36 V 4.0 V 20 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 5.0 OC/W
O O O
A B C D E F G H I J
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.
VMB10-12S Datasheet
