AP83T03GJB is N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR manufactured by Advanced Power Electronics Corp .
| Part Number | Description |
|---|---|
| AP83T03GJ-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T03GJ-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T03GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T03GH-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP83T03GM-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
AP83T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-251S short lead package is preferred for all mercial-industrial through-hole applications without leadcutted.
