AP9918J Description
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Value 2.6 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 200227032 AP9918H/J @Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min....