UT28F256 Overview
The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device.
UT28F256 Key Features
- Supported by industry standard programmer q 45ns and 40ns maximum address access time (-55 oC to +125 oC) q TTL patible
- Operating: 125mA maximum @25MHz
- Derating: 3mA/MHz
- Saturated Cross Section cm2 per bit, 1.0E-11
- 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion Memory cell LET threshold: >128 MeV-cm 2/mg
- AC and DC testing at factory q Packaging options
- 28-lead 50-mil center flatpack (0.490 x 0.74)
- 28-lead 100-mil center DIP (0.600 x 1.4)
- contact factory q V DD : 5.0 volts + 10% q Standard Microcircuit Drawing 5962-96891