UT28F256 Datasheet | Aeroflex Circuit Technology

Standard Products .. UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet December 2002 Features q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time (-55 o C to +125 o C) q TTL patible input and TTL/CMOS patible output levels q Three-state data bus q Low operating and standby current - Operating: 125m A maximum @25MHz - Derating: 3m A/MHz - Standby: 2m A maximum (post-rad) q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019 Total dose: 1E6 rad(Si) LETTH (0.25) ~ 100 Me V-cm2/mg SEL Immune >128 Me V-cm 2/mg - Saturated Cross Section cm2 per bit, 1.0E-11 - 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion Memory cell LET threshold: >128 Me V-cm 2/mg q QML Q & V pliant part - AC and DC testing at factory q Packaging options: - 28-lead 50-mil center flatpack (0.490 x 0.74) - 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory q V DD : 5.0 volts + 10% q Standard Microcircuit Drawing 5962-96891 PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM Features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256. The bination of radiation-hardness, fast access time, and low power consumption make the UT28F256 ideal for high speed systems designed for operation in radiation environments. A(14:0) DECODER MEMORY ARRAY SENSE AMPLIFIER CE PE OE PROGRAMMING CONTROL LOGIC DQ(7:0) Figure 1. PROM Block Diagram .. DEVICE OPERATION The UT28F256 has three control inputs: Chip Enable (CE), Program Enable (PE), and Output Enable (OE); fifteen address inputs, A(14:0); and eight bidirectional data lines, DQ(7:0). CE is the...