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UT28F256 - Radiation-Hardened 32K x 8 PROM

Datasheet Summary

Description

The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device.

Features

  • q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time (-55 oC to +125 oC) q TTL compatible input and TTL/CMOS compatible output levels q Three-state data bus q Low operating and standby current - Operating: 125mA maximum @25MHz.
  • Derating: 3mA/MHz - Standby: 2mA maximum (post-rad) q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019 T.

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Datasheet Details

Part number UT28F256
Manufacturer Aeroflex Circuit Technology
File Size 105.27 KB
Description Radiation-Hardened 32K x 8 PROM
Datasheet download datasheet UT28F256 Datasheet
Additional preview pages of the UT28F256 datasheet.

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Standard Products www.DataSheet4U.com UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet December 2002 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time (-55 oC to +125 oC) q TTL compatible input and TTL/CMOS compatible output levels q Three-state data bus q Low operating and standby current - Operating: 125mA maximum @25MHz • Derating: 3mA/MHz - Standby: 2mA maximum (post-rad) q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019 Total dose: 1E6 rad(Si) LETTH (0.25) ~ 100 MeV-cm2/mg SEL Immune >128 MeV-cm 2/mg - Saturated Cross Section cm2 per bit, 1.0E-11 - 1.
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