UT28F256LV Datasheet | Aeroflex Circuit Technology

Standard Products UT28F256LV Radiation-Hardened 32K x 8 PROM Data Sheet December, 2002 Features q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 65ns maximum address access time (-55 o C to +125 o C) q Three-state data bus q Low operating and standby current - Operating: 50.0m A maximum @15.4MHz - Derating: 1.5m A/MHz - Standby: 1.0m A maximum (post-rad) q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019 - Total dose: 1E6 rad(Si) - LETTH(0.25) ~ 100 Me V-cm2/mg - SEL Immune >128 Me V-cm2/mg - Saturated Cross Section cm2 per bit, 1.0E-11 - 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion - Memory cell LET threshold: >128 Me V-cm2/mg q QML Q & V pliant part - AC and DC testing at factory q Packaging options: - 28-lead 50-mil center flatpack (0.490 x 0.74) - 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory q VDD: 3.0Vto 3.6V q Standard Microcircuit Drawing 5962-01517 PRODUCT DESCRIPTION The UT28F256LV amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256LV PROM Features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256LV. The bination of radiation-hardness, fast access time, and low power consumption make the UT28F256LV ideal for high speed systems designed for operation in radiation environments. A(14:0) DECODER MEMORY ARRAY CE CONTROL PE LOGIC OE SENSE AMPLIFIER PROGRAMMING Figure 1. PROM Block Diagram DQ(7:0) DEVICE...