Description
The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C.
Features
- Zero bias operation.
- Exellent temperature stability.
- Low Video Impedance.
- Screening per MIL-PRF-19500
and MIL-PRF-35834 available. Absolute Maximum Ratings
Parameters
Input Power Operating Temperature Storage Temperature Soldering Temperature
Chip Packaged
Rating
+14 dBm CW or Pulsed in a tuned detector -65 °C to +110 °C -65 °C to +125 °C
See chip assembly instructions on page 8 +230 °C for 5 seconds (must be hand soldered)
Chip
Elect.
MBD1057-C18 Datasheet
