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MSAT-N25 - NIP Diode Attenuator Shunt Element

General Description

A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package.

This device is designed for wireless Telecommunication infrastructure and test instrument applications.

It is also suited for other applications in 0.1 ~ 10 GHz range.

Key Features

  • Low Distortion Harmonics at 85 dBc Typical.
  • Broadband performance, beyond 10 GHz.
  • Low Insertion loss & high attenuation range, 27 dB Electrical Specifications, TC = +25 °C SYMBOL TEST.

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Datasheet Details

Part number MSAT-N25
Manufacturer Aeroflex
File Size 339.66 KB
Description NIP Diode Attenuator Shunt Element
Datasheet download datasheet MSAT-N25 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSAT-N25 NIP Diode Attenuator Shunt Element (2012) Plastic Molded DFN Description A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is also suited for other applications in 0.1 ~ 10 GHz range. Features • Low Distortion Harmonics at 85 dBc Typical • Broadband performance, beyond 10 GHz • Low Insertion loss & high attenuation range, 27 dB Electrical Specifications, TC = +25 °C SYMBOL TEST CONDITIONS VBR Lt Rs min IR = 10 mA IF = 10 mA I = -100 mA IR = 6 mA 10% / 90% F = 500 MHz Rs High I = -10 mA F = 500 MHz Rs Low I = 1 mA F = 500 MHz ATTEN I = -100 mA F < 10 GHz MIN 200 2000 – 2000 30 20 TYPICAL – 3000 1.