Datasheet4U Logo Datasheet4U.com

MSAT-P25 - PIN Diode Attenuator Shunt Element

Description

A broadband, High Linearity medium power shunt PIN Attenuator element 1.9 X 1.1 mm DFN package.

This device is designed for wireless Telecommunication infrastructure and test instrument applications.

It is also suited for other applications in 0.1 ~ 10 GHz range.

Features

  • Low Distortion Harmonics at 85 dBc Typical.
  • Broadband performance, beyond 10 GHz.
  • Low Insertion loss & high attenuation range, 27 dB Electrical Specifications, TC = +25 °C SYMBOL TEST.

📥 Download Datasheet

Datasheet preview – MSAT-P25

Datasheet Details

Part number MSAT-P25
Manufacturer Aeroflex
File Size 300.90 KB
Description PIN Diode Attenuator Shunt Element
Datasheet download datasheet MSAT-P25 Datasheet
Additional preview pages of the MSAT-P25 datasheet.

📁 Similar Datasheet

  • MSAT-P25 - PIN Diode Attenuator Shunt Element (MA-COM)
  • MSA-0100 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0104 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0135 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0136 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0170 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0185 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0186 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0200 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0204 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
Other Datasheets by Aeroflex
  • MSAT-N25 - NIP Diode Attenuator Shunt Element

Full PDF Text Transcription

Click to expand full text
MSAT-P25 PIN Diode Attenuator Shunt Element (2012) Plastic Molded DFN Description A broadband, High Linearity medium power shunt PIN Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is also suited for other applications in 0.1 ~ 10 GHz range. Features • Low Distortion Harmonics at 85 dBc Typical • Broadband performance, beyond 10 GHz • Low Insertion loss & high attenuation range, 27 dB Electrical Specifications, TC = +25 °C SYMBOL TEST CONDITIONS VBR IR = 10 mA t IF = 10 mA IR = 6 mA 10% / 90% Rs min I = 100 mA F = 500 MHz Rs High I = 10 mA F = 500 MHz Rs Low I = 1 mA F = 500 MHz ATTEN I = 100 mA F <10.0 GHz MIN 200 2000 – 1200 20 20 TYPICAL – 3000 1.
Published: |