Datasheet4U Logo Datasheet4U.com

MSAT-P25 - PIN Diode Attenuator Shunt Element

General Description

A broadband, High Linearity medium power shunt PIN Attenuator element 1.9 X 1.1 mm DFN package.

This device is designed for wireless Telecommunication infrastructure and test instrument applications.

It is also suited for other applications in 0.1 ~ 10 GHz range.

Key Features

  • Low Distortion Harmonics at 85 dBc Typical.
  • Broadband performance, beyond 10 GHz.
  • Low Insertion loss & high attenuation range, 27 dB Electrical Specifications, TC = +25 °C SYMBOL TEST.

📥 Download Datasheet

Datasheet Details

Part number MSAT-P25
Manufacturer Aeroflex
File Size 300.90 KB
Description PIN Diode Attenuator Shunt Element
Datasheet download datasheet MSAT-P25 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MSAT-P25 PIN Diode Attenuator Shunt Element MA-COM

Other Datasheets by Aeroflex

Part Number Description
MSAT-N25 NIP Diode Attenuator Shunt Element

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MSAT-P25 PIN Diode Attenuator Shunt Element (2012) Plastic Molded DFN Description A broadband, High Linearity medium power shunt PIN Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is also suited for other applications in 0.1 ~ 10 GHz range. Features • Low Distortion Harmonics at 85 dBc Typical • Broadband performance, beyond 10 GHz • Low Insertion loss & high attenuation range, 27 dB Electrical Specifications, TC = +25 °C SYMBOL TEST CONDITIONS VBR IR = 10 mA t IF = 10 mA IR = 6 mA 10% / 90% Rs min I = 100 mA F = 500 MHz Rs High I = 10 mA F = 500 MHz Rs Low I = 1 mA F = 500 MHz ATTEN I = 100 mA F <10.0 GHz MIN 200 2000 – 1200 20 20 TYPICAL – 3000 1.