Datasheet4U Logo Datasheet4U.com

MSAT-P25 - PIN Diode Attenuator Shunt Element

Download the MSAT-P25 datasheet PDF. This datasheet also covers the MSAT-P25-MA variant, as both devices belong to the same pin diode attenuator shunt element family and are provided as variant models within a single manufacturer datasheet.

General Description

A broadband, High Linearity medium power shunt PIN Attenuator element 1.9 x 1.1 mm DFN package.

This device is designed for wireless Telecommunication infrastructure and test instrument applications.

It is also suited for other applications in 0.1 ~ 10 GHz range.

Key Features

  • Low Distortion Harmonics @ 85 dBc.
  • Broadband performance, >10 GHz.
  • Low Insertion Loss & High Attenuation, 27 dB.
  • RoHS.
  • Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSAT-P25-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MSAT-P25 PIN Diode Attenuator Shunt Element Features  Low Distortion Harmonics @ 85 dBc  Broadband performance, >10 GHz  Low Insertion Loss & High Attenuation, 27 dB  RoHS* Compliant Description A broadband, High Linearity medium power shunt PIN Attenuator element 1.9 x 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is also suited for other applications in 0.1 ~ 10 GHz range. Rev. V1 2012 Electrical Specifications: TA = +25°C (measured on evaluation board) Parameter Test Conditions Units Min.