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MSAT-P25 - PIN Diode Attenuator Shunt Element

This page provides the datasheet information for the MSAT-P25, a member of the MSAT-P25-MA PIN Diode Attenuator Shunt Element family.

Description

A broadband, High Linearity medium power shunt PIN Attenuator element 1.9 x 1.1 mm DFN package.

This device is designed for wireless Telecommunication infrastructure and test instrument applications.

It is also suited for other applications in 0.1 ~ 10 GHz range.

Features

  • Low Distortion Harmonics @ 85 dBc.
  • Broadband performance, >10 GHz.
  • Low Insertion Loss & High Attenuation, 27 dB.
  • RoHS.
  • Compliant.

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Datasheet preview – MSAT-P25

Datasheet Details

Part number MSAT-P25
Manufacturer MA-COM
File Size 600.40 KB
Description PIN Diode Attenuator Shunt Element
Datasheet download datasheet MSAT-P25 Datasheet
Additional preview pages of the MSAT-P25 datasheet.

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Other Datasheets by MA-COM

    Full PDF Text Transcription

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    MSAT-P25 PIN Diode Attenuator Shunt Element Features  Low Distortion Harmonics @ 85 dBc  Broadband performance, >10 GHz  Low Insertion Loss & High Attenuation, 27 dB  RoHS* Compliant Description A broadband, High Linearity medium power shunt PIN Attenuator element 1.9 x 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is also suited for other applications in 0.1 ~ 10 GHz range. Rev. V1 2012 Electrical Specifications: TA = +25°C (measured on evaluation board) Parameter Test Conditions Units Min.
    Published: |