OR4E6 Key Features
- 0.13 µm seven-level metal technology
- Internal performance of >250 MHz (four logic levels)
- I/O performance of >416 MHz for all user I/Os
- Over 1.5 million usable system gates
- Meets multiple I/O interface standards
- 1.5 V operation (30% less power than 1.8 V operation) translates to greater performance
- Embedded block RAM (EBR) for onboard storage and buffer needs
- Built-in system ponents including an internal system bus, eight PLLs, and microprocessor interface. Traditional I/O sele
- LVTTL and LVCMOS (3.3 V, 2.5 V, and 1.8 V) I/Os
- Per pin-selectable I/O clamping diodes provide 3.3 V PCI pliance