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LSC2110 - 1 mW 14 Pin DIL Cooled Laser

Download the LSC2110 datasheet PDF. This datasheet also covers the LSC2110_Agilent(Hewlett variant, as both devices belong to the same 1 mw 14 pin dil cooled laser family and are provided as variant models within a single manufacturer datasheet.

General Description

LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band.

Key Features

  • 1 Milliwatt Optical Output at 25 mA above Threshold, 25°C.
  • Center Wavelength between 1280 nm and 1330 nm.
  • Wide Modulation Bandwidth: LSC2110 - 800 MHz LSC4110 - 1.2 GHz.
  • Wide Operating Temperature Range: -40°C to +85°C.
  • Alternative Package Styles: LSC2110 - 14 Pin DIL LSC4110 - 14 Pin“Butterfly”.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LSC2110_Agilent(Hewlett-Packard).pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LSC2110
Manufacturer Agilent(Hewlett-Packard)
File Size 156.31 KB
Description 1 mW 14 Pin DIL Cooled Laser
Datasheet download datasheet LSC2110 Datasheet

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Other Datasheets by Agilent(Hewlett-Packard)

Part Number Description
LSC3100 14 Pin DIL Uncooled Laser Modules
LSC3300 14 Pin DIL Uncooled Laser Modules
LSC3X00 14 Pin DIL Uncooled Laser Modules
LSC4110 1 mW 14 Pin DIL Cooled Laser Modules
LSCX110 1 mW 14 Pin DIL Cooled Laser Modules

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1 mW 14 Pin DIL Cooled Laser Modules Technical Data LSCX110 Features • 1 Milliwatt Optical Output at 25 mA above Threshold, 25°C • Center Wavelength between 1280 nm and 1330 nm • Wide Modulation Bandwidth: LSC2110 - 800 MHz LSC4110 - 1.2 GHz • Wide Operating Temperature Range: -40°C to +85°C • Alternative Package Styles: LSC2110 - 14 Pin DIL LSC4110 - 14 Pin“Butterfly” Description LSCX110 laser modules are highly reliable fiber optic light sources operating in the 1300 nanometer band. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the Metal Organic Vapor Phase Epitaxy (MOVPE) process, resulting in long lifetimes and modest threshold currents.