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LSC3X00 - 14 Pin DIL Uncooled Laser Modules

Download the LSC3X00 datasheet PDF. This datasheet also covers the LSC3X00_Agilent(Hewlett variant, as both devices belong to the same 14 pin dil uncooled laser modules family and are provided as variant models within a single manufacturer datasheet.

General Description

LSC3X00 laser modules are high reliability fiber optic light sources operating in the 1300 nanometer band.

They are particularly well suited for applications where low power dissipation is required.

Key Features

  • Low Cost Plastic Package (14 Pin DIL).
  • LSC3300: 100 µW (-10 dBm) Min. Power Output LSC3100: 1 mW (0 dBm) Min. Power Output.
  • 1280 - 1330 nm Wavelength.
  • Hermetic Laser Module.
  • -40°C to +85°C Operation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LSC3X00_Agilent(Hewlett-Packard).pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LSC3X00
Manufacturer Agilent(Hewlett-Packard)
File Size 115.84 KB
Description 14 Pin DIL Uncooled Laser Modules
Datasheet download datasheet LSC3X00 Datasheet

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Other Datasheets by Agilent(Hewlett-Packard)

Part Number Description
LSC3100 14 Pin DIL Uncooled Laser Modules
LSC3300 14 Pin DIL Uncooled Laser Modules
LSC2110 1 mW 14 Pin DIL Cooled Laser
LSC4110 1 mW 14 Pin DIL Cooled Laser Modules
LSCX110 1 mW 14 Pin DIL Cooled Laser Modules

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
14 Pin DIL Uncooled Laser Modules Technical Data LSC3X00 Features • Low Cost Plastic Package (14 Pin DIL) • LSC3300: 100 µW (-10 dBm) Min. Power Output LSC3100: 1 mW (0 dBm) Min. Power Output • 1280 - 1330 nm Wavelength • Hermetic Laser Module • -40°C to +85°C Operation Description LSC3X00 laser modules are high reliability fiber optic light sources operating in the 1300 nanometer band. They are particularly well suited for applications where low power dissipation is required. The internal semiconductor lasers are based upon InGaAsP buried heterostructure (BH) technology and fabricated by the MetalOrganic Vapor Phase Epitaxy (MOVPE) process, resulting in long lifetimes and modest threshold currents. The LSC3X00 package includes a photodiode for monitoring the laser output.