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HSCH-5318 Datasheet Beam Lead Schottky Diodes

Manufacturer: Agilent Technologies

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Datasheet Details

Part number	HSCH-5318
Manufacturer	Agilent Technologies
File Size	69.50 KB
Description	Beam Lead Schottky Diodes
Download	HSCH-5318 Download (PDF)

General Description

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.

Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.

A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.

Overview

Beam Lead Schottky Diodes for Mixers and Detectors (1– 26 GHz) Technical Data HSCH-5300.

Key Features

Platinum Tri-Metal System High Temperature Stability.
Silicon Nitride Passivation Stable, Reliable Performance.
Low Noise Figure Guaranteed 7.5 dB at 26 GHz.
High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics.
Rugged Construction 4 Grams Minimum Lead Pull.
Low Capacitance 0.10 pF Max. at 0 V.
Polyimide Scratch Protection Outline 07 130 (5) 100 (4).

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