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HSCH-5315 Datasheet Beam Lead Schottky Diodes

Manufacturer: Agilent Technologies

Download the HSCH-5315 datasheet PDF. This datasheet also includes the HSCH-5318 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HSCH-5318-Agilent.pdf) that lists specifications for multiple related part numbers.

General Description

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.

Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.

A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.

Overview

Beam Lead Schottky Diodes for Mixers and Detectors (1– 26 GHz) Technical Data HSCH-5300.

Key Features

  • Platinum Tri-Metal System High Temperature Stability.
  • Silicon Nitride Passivation Stable, Reliable Performance.
  • Low Noise Figure Guaranteed 7.5 dB at 26 GHz.
  • High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics.
  • Rugged Construction 4 Grams Minimum Lead Pull.
  • Low Capacitance 0.10 pF Max. at 0 V.
  • Polyimide Scratch Protection Outline 07 130 (5) 100 (4).

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Advanced Semiconductor Logo HSCH-5315 BATCH MATCHED BEAM LEAD SCHOTTKY DIODE Advanced Semiconductor

More Datasheets from Agilent Technologies

Part Number Description
HSCH-5310 Beam Lead Schottky Diodes
HSCH-5312 Beam Lead Schottky Diodes
HSCH-5314 Beam Lead Schottky Diodes
HSCH-5316 Beam Lead Schottky Diodes
HSCH-5318 Beam Lead Schottky Diodes
HSCH-5319 Beam Lead Schottky Diodes
HSCH-5330 Beam Lead Schottky Diodes
HSCH-5332 Beam Lead Schottky Diodes
HSCH-5336 Beam Lead Schottky Diodes
HSCH-5340 Beam Lead Schottky Diodes