HSCH-5319 Overview
Description
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.
Key Features
- Platinum Tri-Metal System High Temperature Stability
- Silicon Nitride Passivation Stable, Reliable Performance
- Low Noise Figure Guaranteed 7.5 dB at 26 GHz
- High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics
- Rugged Construction 4 Grams Minimum Lead Pull
- Low Capacitance 0.10 pF Max. at 0 V
