HSCH-5312 Datasheet Beam Lead Schottky Diodes

Manufacturer: Avago Technologies (now Broadcom)

Download the HSCH-5312 datasheet PDF. This datasheet also includes the HSCH-5314 variant, as both parts are published together in a single manufacturer document.

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HSCH-5312 beam lead schottky diodes by Avago Technologies (now Broadcom) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HSCH-5314-AVAGO.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HSCH-5312
Manufacturer	Avago Technologies (now Broadcom)
File Size	75.53 KB
Description	Beam Lead Schottky Diodes
Download	HSCH-5312 Download (PDF)

General Description

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.

Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.

A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.

Overview

HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz) Data.

Key Features

Platinum tri-metal system High temperature stability.
Silicon nitride passivation Stable, reliable performance.
Low noise figure Guaranteed 7.5 dB at 26 GHz.
High uniformity Tightly controlled process insures uniform RF characteristics.
Rugged construction 4 grams minimum lead pull.
Low capacitance 0.10 pF max. at 0 V.
Polyimide scratch protection The basic medium barrier devices in this family are DC tested HSCH-5310 and -5312. Eq.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	HSCH-5312	Beam Lead Schottky Diodes	Agilent

More Datasheets from Avago Technologies (now Broadcom)

Part Number	Description
HSCH-5310	Beam Lead Schottky Diodes
HSCH-5314	Beam Lead Schottky Diodes
HSCH-5330	Beam Lead Schottky Diodes
HSCH-5331	Beam Lead Schottky Diodes
HSCH-5332	Beam Lead Schottky Diodes
HSCH-5340	Beam Lead Schottky Diodes