HSCH-5312 Overview
Key Specifications
Mount Type: Surface Mount
Pins: 2
Operating Voltage: 500 mV
Max Operating Temp: 175 °C
Description
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.
Key Features
- Platinum tri-metal system High temperature stability
- Silicon nitride passivation Stable, reliable performance
- Low noise figure Guaranteed 7.5 dB at 26 GHz
- High uniformity Tightly controlled process insures uniform RF characteristics
- Rugged construction 4 grams minimum lead pull
- Low capacitance 0.10 pF max. at 0 V
