HSCH-5314 Datasheet Beam Lead Schottky Diodes

Manufacturer: Avago Technologies (now Broadcom)

Datasheet Details

Part number	HSCH-5314
Manufacturer	Avago Technologies (now Broadcom)
File Size	75.53 KB
Description	Beam Lead Schottky Diodes
Download	HSCH-5314 Download (PDF)

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.

Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.

A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.

HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz) Data.

Platinum tri-metal system High temperature stability.
Silicon nitride passivation Stable, reliable performance.
Low noise figure Guaranteed 7.5 dB at 26 GHz.
High uniformity Tightly controlled process insures uniform RF characteristics.
Rugged construction 4 grams minimum lead pull.
Low capacitance 0.10 pF max. at 0 V.
Polyimide scratch protection The basic medium barrier devices in this family are DC tested HSCH-5310 and -5312. Eq.

Brand Logo	Part Number	Description	Manufacturer
	HSCH-5314	Beam Lead Schottky Diodes	Agilent