HSCH-5314 Datasheet Text
HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz)
Data Sheet
Description
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.
The Avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.
Applications
The beam lead diode is ideally suited for use in stripline or microstrip circuits. Its small physical size and uniform dimensions give it low parasitics and repeatable RF characteristics through K-band.
Features
- Platinum tri-metal system High temperature stability
- Silicon nitride passivation Stable, reliable performance
- Low noise figure Guaranteed 7.5 dB at 26 GHz
- High uniformity Tightly controlled process insures uniform RF characteristics
- Rugged construction 4 grams minimum lead pull
- Low capacitance 0.10 pF max. at 0 V
- Polyimide scratch protection
The basic medium barrier devices in this family are DC tested HSCH-5310 and -5312. Equivalent low barrier devices are HSCH-5330 and -5332. Batch matched versions are available as HSCH-5331.
The HSCH-5340 is selected for applications requiring guaranteed RF-tested performance up to 26 GHz. The HSCH-5314 is rated at 7.2 dB maximum noise figure at 16 GHz.
Assembly Techniques Thermopression bonding is remended. Welding or conductive epoxy may also be used. For additional information, see Application Note 979, The Handling and Bonding of Beam Lead Devices Made Easy, or Application Note 993, Beam Lead Device...
