2SB806
2SB806 is SILICON PNP EPITAXIAL PLANAR TRANSISTOR manufactured by AiT Semiconductor.
DESCRIPTION
The 2SB806-R, 2SB806-Q and 2SB806-P are available in the SOT-89 package.
ORDERING INFORMATION
Package Type
Part Number
2SB806-R
SOT-89
2SB806-Q
2SB806-P
1,000pcs/Reel
Ai T provides all Ro HS pliant Products h FE CLASSIFICATION
Rank R Q p
Range 90 ~ 180 135 ~ 270 200 ~ 400
FEATURE
- High collector to emitter voltage: VCEO>-120V.
- Excellent h FE linearity.
PIN DESCRIPTION
PIN# 1 2 3
SOT-89
DESCRIPTION
Base
Collector Emitter
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise specified.
VCBO, Collector to Base Voltage
-120 V
VCEO, Collector to Emitter Voltage
-120 V
VEBO, Emitter to Base Voltage
-5 V
IC, Collector Current-Continuous
-0.7 A
ICM, Collector Current-Continuous (pulse)
-1.2 A
PC, Collector Power Dissipation TJ, Junction Temperature
2000 m W 150 °C
Tstg, Storage Temperature
-55 ~ +150 °C
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device...
