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2SB806 - SILICON PNP EPITAXIAL PLANAR TRANSISTOR

General Description

The 2SB806-R, 2SB806-Q and 2SB806-P are available in the SOT-89 package.

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Datasheet Details

Part number 2SB806
Manufacturer AiT Semiconductor
File Size 319.32 KB
Description SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet 2SB806 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AiT Semiconductor Inc. 2SB806 www.ait-ic.com TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The 2SB806-R, 2SB806-Q and 2SB806-P are available in the SOT-89 package. ORDERING INFORMATION Package Type Part Number 2SB806-R SOT-89 2SB806-Q 2SB806-P SPQ 1,000pcs/Reel AiT provides all RoHS Compliant Products hFE CLASSIFICATION Rank R Q p Range 90 ~ 180 135 ~ 270 200 ~ 400 FEATURE • High collector to emitter voltage: VCEO>-120V. • Excellent hFE linearity. PIN DESCRIPTION PIN# 1 2 3 SOT-89 DESCRIPTION Base Collector Emitter ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise specified. VCBO, Collector to Base Voltage -120 V VCEO, Collector to Emitter Voltage -120 V VEBO, Emitter to Base Voltage -5 V IC, Collector Current-Continuous -0.