2SB806
2SB806 is PNP Silicon Epitaxial Planar Transistor manufactured by Galaxy Microelectronics.
Features
- High collector to emitter voltage
- Ro HS pliant with Halogen-free
PNP Silicon Epitaxial Planar Transistor 2SB806
Mechanical Data
- Case: SOT-89
- Molding pound: UL flammability classification rating 94V-0
- Terminals: Tin-plated; solderability per MIL-STD-202, Method 208
SOT-89
Ordering Information
Part Number 2SB806-R 2SB806-Q 2SB806-P
Package SOT-89 SOT-89 SOT-89
Shipping Quantity 1000 pcs / Tape & Reel 1000 pcs / Tape & Reel 1000 pcs / Tape & Reel
Marking Code KR KQ KP
Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Continuous Collector Current Peak Collector Current
Symbol VCBO VCEO VEBO IC ICM
Value -120 -120 -5 -0.7 -1.4
Unit V V V A A
Thermal Characteristics
Parameter
Symbol
Power Dissipation
PD Power Dissipation
- 1
Thermal Resistance Junction-to-Air
- 1
RθJA
Thermal Resistance Junction-to-Case
- 1
RθJC
Thermal Resistance Junction-to-Lead
- 1
RθJL
Operating junction Temperature
Storage Temperature Range
TSTG
Note 1: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ...