• Part: 2SB806
  • Description: PNP Silicon Epitaxial Planar Transistor
  • Category: Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 587.73 KB
Download 2SB806 Datasheet PDF
Galaxy Microelectronics
2SB806
2SB806 is PNP Silicon Epitaxial Planar Transistor manufactured by Galaxy Microelectronics.
Features - High collector to emitter voltage - Ro HS pliant with Halogen-free PNP Silicon Epitaxial Planar Transistor 2SB806 Mechanical Data - Case: SOT-89 - Molding pound: UL flammability classification rating 94V-0 - Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-89 Ordering Information Part Number 2SB806-R 2SB806-Q 2SB806-P Package SOT-89 SOT-89 SOT-89 Shipping Quantity 1000 pcs / Tape & Reel 1000 pcs / Tape & Reel 1000 pcs / Tape & Reel Marking Code KR KQ KP Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Continuous Collector Current Peak Collector Current Symbol VCBO VCEO VEBO IC ICM Value -120 -120 -5 -0.7 -1.4 Unit V V V A A Thermal Characteristics Parameter Symbol Power Dissipation PD Power Dissipation - 1 Thermal Resistance Junction-to-Air - 1 RθJA Thermal Resistance Junction-to-Case - 1 RθJC Thermal Resistance Junction-to-Lead - 1 RθJL Operating junction Temperature Storage Temperature Range TSTG Note 1: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ...