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AM2306 - -30V N-CHANNEL ENHANCEMENT MODE MOSFET

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AiT Semiconductor

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AM2306 -30V N-CHANNEL ENHANCEMENT MODE MOSFET by AiT Semiconductor - Datasheet Preview — Datasheet preview – AM2306

Datasheet Details

Part number	AM2306
Manufacturer	AiT Semiconductor
File Size	433.88 KB
Description	-30V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	AM2306 Datasheet
Additional preview pages of the AM2306 datasheet.

Product details

Description

The AM2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Features

-30V/3.6A, RDS(ON)= 45mΩ(typ. )@VGS= 10V.
30V/2.8A, RDS(ON)= 55mΩ(typ. )@VGS= 4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and Maximum DC current capability.
Available in a SOT-23 package.

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Published: Jun 6, 2015 |