AM2306 Overview
The AM2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance.
AM2306 Key Features
- 30V/3.6A, RDS(ON)= 45mΩ(typ.)@VGS= 10V
- 30V/2.8A, RDS(ON)= 55mΩ(typ.)@VGS= 4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and Maximum DC
- Available in a SOT-23 package
- Power Management in Note book
- Portable Equipment
- LCD Display inverter
- Battery Powered System
- DC/DC Converter
