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AM2306 - -30V N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

The AM2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -30V/3.6A, RDS(ON)= 45mΩ(typ. )@VGS= 10V.
  • 30V/2.8A, RDS(ON)= 55mΩ(typ. )@VGS= 4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and Maximum DC current capability.
  • Available in a SOT-23 package.

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Datasheet Details

Part number AM2306
Manufacturer AiT Semiconductor
File Size 433.88 KB
Description -30V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM2306 Datasheet

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AiT Semiconductor Inc. www.ait-ic.com AM2306 -30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The AM2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. AM2306 is available in a SOT-23 package. ORDERING INFORMATION Package Type Part Number SOT-23 AM2306E3R E3 AM2306E3VR Note R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package FEATURES  -30V/3.6A, RDS(ON)= 45mΩ(typ.)@VGS= 10V  30V/2.