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AM2306 - -30V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Overview

AiT Semiconductor

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AM2306 -30V N-CHANNEL ENHANCEMENT MODE MOSFET by AiT Semiconductor - Datasheet Preview — Datasheet preview – AM2306

Datasheet Details

Part number	AM2306
Manufacturer	AiT Semiconductor
File Size	433.88 KB
Description	-30V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	AM2306 Datasheet
Additional preview pages of the AM2306 datasheet.

Product details

Description

The AM2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

Features

-30V/3.6A, RDS(ON)= 45mΩ(typ. )@VGS= 10V.
30V/2.8A, RDS(ON)= 55mΩ(typ. )@VGS= 4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and Maximum DC current capability.
Available in a SOT-23 package.

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Published: Jun 6, 2015 |