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Analog Power
N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits
AM2306N
VDS (V) 30
PRODUCT SUMMARY rDS(on) (mΩ)
58 @ VGS = 10V 82 @ VGS = 4.5V
ID (A) 3.9 3.3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
3.9 3.1
IDM
20
IS
2.1
Power Dissipation a
TA=25°C TA=70°C
PD
1.3 0.
AM2306N Datasheet
