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AM2342 - 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • The AM2342 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage.

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Datasheet Details

Part number AM2342
Manufacturer AiT Semiconductor
File Size 329.21 KB
Description 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM2342 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AiT Semiconductor Inc. www.ait-ic.com   AM2342 MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2342 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.  20V/5.0A, RDS(ON) =25mΩ(typ.)@VGS =4.5V  20V/4.5A, RDS(ON) =34mΩ(typ.)@VGS =2.5V  20V/4.0A, RDS(ON) =48mΩ(typ.)@VGS =1.