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AM3407 - -30V P-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • The AM3407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in.

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Datasheet Details

Part number AM3407
Manufacturer AiT Semiconductor
File Size 682.84 KB
Description -30V P-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM3407 Datasheet

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AiT Semiconductor Inc. www.ait-ic.com AM3407 MOSFET -30V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in applications.     AM3407 is available in a SOT-23 package.  -30V/-4.3A, RDS(ON)=44mΩ(typ.)@VGS=-10V -30V/-3.0A, RDS(ON)=70mΩ(typ.)@VGS=-4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Available in a SOT-23 package.