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Analog Power
AM3407PE
P-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Battery Powered Instruments • Portable Computing • Mobile Phones • GPS Units and Media Players
PRODUCT SUMMARY rDS(on) (mΩ) 34 @ VGS = -4.5V 48 @ VGS = -2.5V
VDS (V) -20
ID(A) -5 -3
TSOP6
Drain: 1,2,5,6 Gate: 3 Source: 4
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage -20 VGS Gate-Source Voltage ±12 TA=25°C -5 ID Continuous Drain Current a TA=100°C -3.3 IDM Pulsed Drain Current b -20 a I -1 Continuous Source Current (Diode Conduction) S TA=25°C PD 1.40 Power Dissipation a TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range
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AM3407PE Datasheet
