AM5853J8R
Overview
The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density. Advanced trench technology.
- MOSFET -20V/-3.5A, RDS(ON) ＜ 70mΩ@VGS = -4.5V -20V/-2.4A, RDS(ON) ＜ 95mΩ@VGS = -2.5V -20V/-1.8A, RDS(ON) ＜ 125mΩ@VGS = -1.8V
- SCHOTTKY VKA =20V, VF0.43(Typ.)@IF =1A * *
- Super high density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Available in DFN8 (3x2) Package This high density process is especially tailored to minimize on-state resistance. The AM9435 is particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. The AM5853 is available in DFN8 (3x2) Package
