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AM5853J8R

Manufacturer: AiT Semiconductor

AM5853J8R datasheet by AiT Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

AM5853J8R datasheet preview

AM5853J8R Datasheet Details

Part number AM5853J8R
Datasheet AM5853J8R AM5853 Datasheet (PDF)
File Size 528.24 KB
Manufacturer AiT Semiconductor
Description MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE
AM5853J8R page 2 AM5853J8R page 3

AM5853J8R Overview

The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density. Advanced trench technology.

AM5853J8R Key Features

  • SCHOTTKY VKA =20V, VF0.43(Typ.)@IF =1A
  • Super high density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. A
  • Battery Powered System Notebook Power Management Cell Phone
  • MAR 2010 RELEASED
  • MAR 2010 RELEASED
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More Datasheets from AiT Semiconductor

View all AiT Semiconductor datasheets

Part Number Description
AM5853J8VR MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE
AM5853 P-CHANNEL MOSFET WITH 0.12V SCHOTTKY DIODE MOSFET
AM50N03 MOSFET
AM50N04 50A N-CHANNEL MOSFET

AM5853J8R Distributor

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