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AM5853J8VR - MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE

Download the AM5853J8VR datasheet PDF. This datasheet also covers the AM5853 variant, as both devices belong to the same mosfet+ schottky diode -20v p-channel enhancement mode family and are provided as variant models within a single manufacturer datasheet.

General Description

The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density.

Advanced trench technology.

Key Features

  • MOSFET -20V/-3.5A, RDS(ON) ＜ 70mΩ@VGS = -4.5V -20V/-2.4A, RDS(ON) ＜ 95mΩ@VGS = -2.5V -20V/-1.8A, RDS(ON) ＜ 125mΩ@VGS = -1.8V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AM5853-AiTSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AM5853J8VR
Manufacturer AiT Semiconductor
File Size 528.24 KB
Description MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE
Datasheet download datasheet AM5853J8VR Datasheet

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Other Datasheets by AiT Semiconductor

Part Number Description
AM5853J8R MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE
AM5853 P-CHANNEL MOSFET WITH 0.12V SCHOTTKY DIODE MOSFET
AM50N03 MOSFET
AM50N04 50A N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AiT Semiconductor Inc. www.ait-ic.com AM5853 MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE   DESCRIPTION The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density. Advanced trench technology. FEATURES  MOSFET -20V/-3.5A, RDS(ON) ＜ 70mΩ@VGS = -4.5V -20V/-2.4A, RDS(ON) ＜ 95mΩ@VGS = -2.5V -20V/-1.8A, RDS(ON) ＜ 125mΩ@VGS = -1.8V  SCHOTTKY VKA =20V, VF0.43(Typ.)@IF =1A    Super high density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Available in DFN8 (3x2) Package This high density process is especially tailored to minimize on-state resistance.