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AM65R165 Datasheet 24a Super Junction MOSFET

Manufacturer: AiT Semiconductor

Overview: AiT Semiconductor Inc. www.ait-ic.com AM65R165 MOSFET 700V, 24A SUPER JUNCTION MOSFET ESCRIPTION FEATURE The AM65R165 is available in TO-220F, TO-247,  Fast Switching TO-262-3 and TO-263-2 Packages  100% avalanche tested  Improved dv/dt capability BVDSS RDSON ID 700V 0.

Datasheet Details

Part number AM65R165
Manufacturer AiT Semiconductor
File Size 1.23 MB
Description 24A SUPER JUNCTION MOSFET
Datasheet AM65R165-AiTSemiconductor.pdf

General Description

Application: High Frequency Switching Mode Power Supply ORDERING INFORMATION Package Type Part Number TO-220F SPQ: 50pcs/Tube AM65R165T3FU T3F AM65R165T3FVU TO-247 SPQ: 30pcs/Tube AM65R165TL3FU TL3F AM65R165TL3FVU TO-262-3 SPQ: 50pcs/Tube AM65R165TS3U TS3 AM65R165TS3VU TO-263-2 SPQ: 800pcs/ Reel AM65R165S2R S2 AM65R165S2VR U: Tube Note R: Tape & Reel V: Halogen free Package AiT provides all RoHS products TO-263-2 Pin# TO-220F TO-247 TO-263-2 TO-262-3 1 1 2 2,4 3 3 Symbol Function G Gate D Drain S Source REV1.0 - JUN 2023 RELEASED - -1- AiT Semiconductor Inc.

www.ait-ic.com AM65R165 MOSFET 700V, 24A SUPER JUNCTION MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25°C, unless otherwise specified.

VDSS, Drain-to-Source Voltage 650V ID, Continuous Drain Current 24A ID, Continuous Drain Current TC = 100 °C 15A IDM, Pulsed Drain Current (1) 72A VGS, Gate-to-Source Voltage ±30V EAS, Single Pulse Avalanche Energy (2) 550mJ dv/dt, Peak Diode Recovery dv/dt (3) 15V/ns PD, Power Dissipation PD, Derating Factor above 25°C TO-262-3, TO-263-2 220W 1.75W/℃ PD, Power Dissipation PD, Derating Factor above 25°C TO-220F 42W 0.33W/℃ TJ, Operating Junction Temperature Range 150℃ TSTG, Storage Temperature Range -55℃~+150℃ TL, Maximum Temperature for Soldering 300℃ RθJA, Junction-to-Ambient RθJC, Junction-to-Case TO-247, TO-262-3, TO-263-2 62.5℃/W 0.57℃/W RθJA, Junction-to-Ambient RθJC, Junction-to-Case TO-220F 80℃/W 3℃/W Stresses above may cause permanent damage to the device.

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