AFC6332 Datasheet | Alfa-MOS

Description AFC6332, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-363 ) 20V N & P Pair Enhancement Mode MOSFET Features N-Channel 20V/1.0A,RDS(ON)=280mΩ@VGS=4.5V 20V/0.8A,RDS(ON)=340mΩ@VGS=2.5V 20V/0.7A,RDS(ON)=580mΩ@VGS=1.8V P-Channel -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 840 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1440 mΩ@ VGS =-1.8V Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package design Application Load Switch for Portable Devices, Smart Phones, Pagers Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Ordering Information Part Ordering...