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AFC6332 - N&P-Channel MOSFET

This page provides the datasheet information for the AFC6332, a member of the AFC6332-Alfa N&P-Channel MOSFET family.

Description

AFC6332, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • N-Channel 20V/1.0A,RDS(ON)=280mΩ@VGS=4.5V 20V/0.8A,RDS(ON)=340mΩ@VGS=2.5V 20V/0.7A,RDS(ON)=580mΩ@VGS=1.8V P-Channel -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 840 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1440 mΩ@ VGS =-1.8V Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package design.

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Datasheet Details

Part number AFC6332
Manufacturer Alfa-MOS
File Size 1.07 MB
Description N&P-Channel MOSFET
Datasheet download datasheet AFC6332 Datasheet
Additional preview pages of the AFC6332 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFC6332, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) AFC6332 20V N & P Pair Enhancement Mode MOSFET Features N-Channel 20V/1.0A,RDS(ON)=280mΩ@VGS=4.5V 20V/0.8A,RDS(ON)=340mΩ@VGS=2.5V 20V/0.7A,RDS(ON)=580mΩ@VGS=1.8V P-Channel -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 840 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1440 mΩ@ VGS =-1.
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