AFC6610W Description
AFC6610W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description (SOT-23-6L).
AFC6610W Key Features
- N-Channel 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V
- P-Channel -100V/-1.0A,RDS(ON)=650mΩ@VGS=-10V -100V/-0.5A,RDS(ON)=700mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current
- SOT-23-6L package design
- LED Backlight
- DC/DC Converter
- Load Switch for Portable