AFC6610W Datasheet | Alfa-MOS

Description AFC6610W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description (SOT-23-6L) Features - N-Channel 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V - P-Channel -100V/-1.0A,RDS(ON)=650mΩ@VGS=-10V -100V/-0.5A,RDS(ON)=700mΩ@VGS=-4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-23-6L package design Application - LED Backlight - DC/DC Converter - Load Switch for Portable Applications Pin Define Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Ordering Information Part Ordering No. Part Marking Package AFC6610WS26RG 10WYW SOT-23-6L ※ 10W parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFC6610WS26RG : 7” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.B Sep. 2022 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page 1 Alfa-MOS Technology 100V N & P Pair Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter...