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AFC6610W Datasheet 100v N&p-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology AFC6610W 100V N & P Pair Enhancement Mode MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFC6610W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description (SOT-23-6L)

Key Features

  • N-Channel 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V.
  • P-Channel -100V/-1.0A,RDS(ON)=650mΩ@VGS=-10V -100V/-0.5A,RDS(ON)=700mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design.

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AFC6610W Distributor