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AFC6610W - 100V N&P-Channel MOSFET

Download the AFC6610W datasheet PDF. This datasheet also covers the AFC6610W-Alfa variant, as both devices belong to the same 100v n&p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFC6610W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • N-Channel 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V.
  • P-Channel -100V/-1.0A,RDS(ON)=650mΩ@VGS=-10V -100V/-0.5A,RDS(ON)=700mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFC6610W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFC6610W
Manufacturer Alfa-MOS
File Size 819.34 KB
Description 100V N&P-Channel MOSFET
Datasheet download datasheet AFC6610W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFC6610W 100V N & P Pair Enhancement Mode MOSFET General Description AFC6610W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description (SOT-23-6L) Features  N-Channel 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V  P-Channel -100V/-1.0A,RDS(ON)=650mΩ@VGS=-10V -100V/-0.5A,RDS(ON)=700mΩ@VGS=-4.
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