Alfa-MOS AFN1932
N-Channel MOSFET
| Part No. | AFN1932 |
|---|---|
| Datasheet | AFN1932 Download |
| Manufacturer |  Alfa-MOS |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN1932, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-363 ) AFN1932 30V N-Channel Enhancement Mode MOSFETFEATURES
30V/1.5A,RDS(ON)=430mΩ@VGS=4.5V 30V/1.2A,RDS(ON)=580mΩ@VGS=2.5V 30V/0.6A,RDS(ON)=860mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Load/Power Switching Smart Phones, Pagers PA Switch Level Switch Pin Define Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1DESCRIPTION
Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 Ordering Information Part Ordering No.
