AFN1932E
AFN1932E is N-Channel MOSFET manufactured by Alfa-MOS.
- Part of the AFN1932E-Alfa comparator family.
- Part of the AFN1932E-Alfa comparator family.
Alfa-MOS
Technology
General Description
AFN1932E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Pin Description ( SOT-363 )
30V N-Channel Enhancement Mode MOSFET
Features
- 30V/1.8A,RDS(ON)=450mΩ@VGS=4.5V
- 30V/1.5A,RDS(ON)=600mΩ@VGS=2.5V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- ESD Protected
- SOT-363 package design
Application
- Drivers:...
