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AFN1912E - N-Channel MOSFET

This page provides the datasheet information for the AFN1912E, a member of the AFN1912E-Alfa N-Channel MOSFET family.

Datasheet Summary

Description

AFN1912E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=580mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-363 package design.

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Datasheet Details

Part number AFN1912E
Manufacturer Alfa-MOS
File Size 593.88 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN1912E Datasheet
Additional preview pages of the AFN1912E datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN1912E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) AFN1912E 20V N-Channel Enhancement Mode MOSFET Features 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=580mΩ@VGS=1.
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