AFN1912E
AFN1912E is N-Channel MOSFET manufactured by Alfa-MOS.
- Part of the AFN1912E-Alfa comparator family.
- Part of the AFN1912E-Alfa comparator family.
Alfa-MOS
Technology
General Description
AFN1912E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
Pin Description ( SOT-363 )
20V N-Channel Enhancement Mode MOSFET
Features
20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=580mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-363 package design
Application...
