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AFN1990S Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology AFN1990S 60V N-Channel Enhancement Mode MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN1990S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Key Features

  • 60V/40A,RDS(ON)= 7.8mΩ@VGS=10V 60V/25A,RDS(ON)= 9.8mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Pin.

AFN1990S Distributor