AFN3456S Datasheet | Alfa-MOS

Description AFN3456S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TSOT-23-6L ) 30V N-Channel Enhancement Mode MOSFET Features 30V/5.4A,RDS(ON)=40mΩ@VGS=10V 30V/4.8A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOT-23-6L package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Description Drain Drain Gate Source Drain Drain Ordering Information Part Ordering No. Part Marking Package AFN3456STS26RG 6SYW TSOT-23-6L ϡʳ 6S parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFN3456STS26RG : 7” Tape & Reel ; Pb- Free ;...