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AFN3456S Datasheet N-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN3456S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( TSOT-23-6L ) AFN3456S 30V N-Channel Enhancement Mode MOSFET

Key Features

  • 30V/5.4A,RDS(ON)=40mΩ@VGS=10V 30V/4.8A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOT-23-6L package design.

AFN3456S Distributor