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AFN6248S - N-Channel MOSFET

This page provides the datasheet information for the AFN6248S, a member of the AFN6248S-Alfa N-Channel MOSFET family.

Datasheet Summary

Description

AFN6248S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 60V/18A,RDS(ON)= 7.5mΩ@VGS=10V z 60V/14A,RDS(ON)= 9.2mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design.

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Datasheet Details

Part number AFN6248S
Manufacturer Alfa-MOS
File Size 400.87 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6248S Datasheet
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Alfa-MOS Technology AFN6248S 60V N-Channel Enhancement Mode MOSFET General Description AFN6248S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z 60V/18A,RDS(ON)= 7.5mΩ@VGS=10V z 60V/14A,RDS(ON)= 9.2mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design Application z Synchronous Rectifier z Power Supplies z LED TV Pin Define Pin 4 1~3 5~8 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No.
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