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AFN6252S - N-Channel MOSFET

This page provides the datasheet information for the AFN6252S, a member of the AFN6252S-Alfa N-Channel MOSFET family.

Datasheet Summary

Description

AFN6252S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 150V/5.9A,RDS(ON)= 64mΩ@VGS=10V.
  • 150V/4.8A,RDS(ON)= 70mΩ@VGS=6V.
  • Super high density cell design for extremely low RDS (ON).
  • DFN5X6-8L package design.

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Datasheet Details

Part number AFN6252S
Manufacturer Alfa-MOS
File Size 424.25 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6252S Datasheet
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Alfa-MOS Technology AFN6252S 150V N-Channel Enhancement Mode MOSFET General Description AFN6252S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features  150V/5.9A,RDS(ON)= 64mΩ@VGS=10V  150V/4.8A,RDS(ON)= 70mΩ@VGS=6V  Super high density cell design for extremely low RDS (ON)  DFN5X6-8L package design Application  Synchronous Rectifier  Power Supplies  LED TV Pin Define Pin 1~3 4 5~8 Symbol S G D Description Source Gate Drain Ordering Information Part Ordering No.
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