AFN6252S Description
AFN6252S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L.
AFN6252S Key Features
- 150V/5.9A,RDS(ON)= 64mΩ@VGS=10V
- 150V/4.8A,RDS(ON)= 70mΩ@VGS=6V
- Super high density cell design for extremely low
- DFN5X6-8L package design
- Synchronous Rectifier
- Power Supplies
- LED TV