AFN6298S Datasheet | Alfa-MOS

Description AFN6298S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( TO-262 ) Features 100V/30A,RDS(ON)= 12mΩ@VGS=10V 100V/15A,RDS(ON)= 18mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-262 package design Application DC/DC Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV ndustrial Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package 6298S AFN6298ST262TG AAAAAA TO-262 BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN6298ST262TG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Jan. 2014 Description Gate Source Drain Unit Tube Quantity...