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AFN6298S - N-Channel MOSFET

This page provides the datasheet information for the AFN6298S, a member of the AFN6298S-Alfa N-Channel MOSFET family.

Datasheet Summary

Description

AFN6298S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 100V/30A,RDS(ON)= 12mΩ@VGS=10V 100V/15A,RDS(ON)= 18mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-262 package design.

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Datasheet Details

Part number AFN6298S
Manufacturer Alfa-MOS
File Size 541.65 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6298S Datasheet
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Alfa-MOS Technology AFN6298S 100V N-Channel Enhancement Mode MOSFET General Description AFN6298S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-262 ) Features 100V/30A,RDS(ON)= 12mΩ@VGS=10V 100V/15A,RDS(ON)= 18mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) TO-262 package design Application DC/DC Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV ndustrial Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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