AFN7110S Overview
Description
AFN7110S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Key Features
- ID=20A,RDS(ON)=4.5mΩ@VGS=10V
- ID=15A,RDS(ON)=5.4mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- DFN3X3-8L package design
