AFN7456S Overview
AFN7456S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN 5X6-8L ) AFN7456S 100V N-Channel...
AFN7456S Key Features
- ID=12A,RDS(ON)= 20mΩ@VGS=10V
- ID=10A,RDS(ON)= 28mΩ@VGS=4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- DFN 5X6-8L package design
- Synchronous Rectification
- DC/DC Primary Side Switch
- Tele/Server 48 V, Full/Half-Bridge DC/DC
- Quick Charge 2.0/3.0