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AFN7456S - 100V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN7456S, a member of the AFN7456S-Alfa 100V N-Channel Enhancement Mode MOSFET family.

Description

AFN7456S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • ID=12A,RDS(ON)= 20mΩ@VGS=10V.
  • ID=10A,RDS(ON)= 28mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN 5X6-8L package design BOTTOM VIEW SYMBOL TOP VIEW.

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Datasheet Details

Part number AFN7456S
Manufacturer Alfa-MOS
File Size 804.10 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN7456S Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN7456S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN 5X6-8L ) AFN7456S 100V N-Channel Enhancement Mode MOSFET Features  ID=12A,RDS(ON)= 20mΩ@VGS=10V  ID=10A,RDS(ON)= 28mΩ@VGS=4.
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