AFN7472S Datasheet | Alfa-MOS

Description AFN7472S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) 30V N-Channel Enhancement Mode MOSFET Features 30V/15A,RDS(ON)=8.6mΩ@VGS=10V 30V/13A,RDS(ON)=14mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.3-8L package design Application DC-DC Converter POL Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No. Part Marking Package AFN7472SFN308RG 7472S DFN3.3X3.3-8L ϡʳ YY year code ϡʳ MM month code ϡʳ DD date code ϡʳ AFN7472SFN308RG : 13”Tape & Reel ;...