AFP2311A - 20V P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP2311A, a member of the AFP2311A-Alfa 20V P-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

Part number	AFP2311A
Manufacturer	Alfa-MOS
File Size	621.26 KB
Description	20V P-Channel Enhancement Mode MOSFET
Datasheet	AFP2311A Datasheet
Additional preview pages of the AFP2311A datasheet.

AFP2311A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

-20V/-2.8A,RDS(ON)=55mΩ@VGS=4.5V -20V/-2.2A,RDS(ON)=70mΩ@VGS=2.5V -20V/-1.8A,RDS(ON)=92mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design.

Other Datasheets by Alfa-MOS

Published: Nov 22, 2018 |