Alfa-MOS AFP2311
20V P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
AFP2311, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-23-3L ) AFP2311 20V P-Channel Enhancement Mode MOSFETFEATURES
-20V/-4.0A,RDS(ON)=56mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=70mΩ@VGS=2.5V -20V/-2.8A,RDS(ON)=100mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Portable Equipment Battery Powered System Net Working System Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP2311S23RG 11YW SOT-23-3L ϡʳ 11 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W w