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AFP2317 - P-Channel Enhancement Mode MOSFET

Download the AFP2317 datasheet PDF. This datasheet also covers the AFP2317-Alfa variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP2317, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • -40V/-3.6A,RDS(ON)=52mΩ@VGS=-10.0V -40V/-3.2A,RDS(ON)=67mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP2317-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP2317
Manufacturer Alfa-MOS
File Size 556.67 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP2317 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP2311 20V P-Channel Enhancement Mode MOSFET
AFP2311A 20V P-Channel Enhancement Mode MOSFET
AFP2319A 40V P-Channel MOSFET
AFP2301AS 20V P-Channel MOSFET
AFP2303A P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP2317, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFP2317 40V P-Channel Enhancement Mode MOSFET Features -40V/-3.6A,RDS(ON)=52mΩ@VGS=-10.0V -40V/-3.2A,RDS(ON)=67mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.