AFP2415WS Datasheet | Alfa-MOS

Description AFP2415WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) 20V P-Channel Enhancement Mode MOSFET Features z -20V/-5.6A,RDS(ON)=32mΩ@VGS=-4.5V z -20V/-2.8A,RDS(ON)=42mΩ@VGS=-2.5V z -20V/-2.0A,RDS(ON)=60mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design Application z Load Switch, PA Switch and Battery Switch for Portable Devices Pin Define Pin 1,2,5,6 4 3 Symbol D S G Description Drain Source Gate Ordering Information Part Ordering No. Part Marking Package AFP2415WSFN226RG W15YW...