AFP2125S Datasheet | Alfa-MOS

Description AFP2125S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-3L ) 200V P-Channel Enhancement Mode MOSFET Features -200V/-0.5A,RDS(ON)=2400 mΩ@VGS=-10V -200V/-0.3A,RDS(ON)=2600 mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( >2KV) Diode design- in SOT-23-3L package design Application Active Clamp Circuits in DC/DC Power Supplies Load switch Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2125SS23RG 21SYW SOT-23-3L ϡʳ 21S parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26...