Datasheet4U Logo Datasheet4U.com

AFP2125S - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP2125S, a member of the AFP2125S-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP2125S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -200V/-0.5A,RDS(ON)=2400 mΩ@VGS=-10V -200V/-0.3A,RDS(ON)=2600 mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( >2KV) Diode design.
  • in SOT-23-3L package design.

📥 Download Datasheet

Datasheet preview – AFP2125S

Datasheet Details

Part number AFP2125S
Manufacturer Alfa-MOS
File Size 583.51 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP2125S Datasheet
Additional preview pages of the AFP2125S datasheet.

📁 Similar Datasheet

Other Datasheets by Alfa-MOS

Full PDF Text Transcription

Click to expand full text
Alfa-MOS Technology General Description AFP2125S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFP2125S 200V P-Channel Enhancement Mode MOSFET Features -200V/-0.5A,RDS(ON)=2400 mΩ@VGS=-10V -200V/-0.3A,RDS(ON)=2600 mΩ@VGS=-4.
Published: |