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AFP2125S Datasheet P-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFP2125S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( SOT-23-3L ) AFP2125S 200V P-Channel Enhancement Mode MOSFET

Key Features

  • -200V/-0.5A,RDS(ON)=2400 mΩ@VGS=-10V -200V/-0.3A,RDS(ON)=2600 mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( >2KV) Diode design.
  • in SOT-23-3L package design.

More Datasheets from Alfa-MOS

Part Number Description
AFP2301AS 20V P-Channel MOSFET
AFP2303A P-Channel MOSFET
AFP2307A P-Channel MOSFET
AFP2309A 60V P-Channel MOSFET
AFP2311 20V P-Channel Enhancement Mode MOSFET
AFP2311A 20V P-Channel Enhancement Mode MOSFET
AFP2317 P-Channel Enhancement Mode MOSFET
AFP2319A 40V P-Channel MOSFET
AFP2323A P-Channel MOSFET
AFP2325A P-Channel MOSFET

AFP2125S Distributor