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AFP2301AS Datasheet PDF

Alfa-MOS AFP2301AS

20V P-Channel MOSFET

Part No. AFP2301AS
Datasheet AFP2301AS Download
Manufacturer
Alfa-MOS
Description 20V P-Channel MOSFET
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AFP2301AS datasheet page 1 preview

GENERAL DESCRIPTION

AFP2301AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin

DESCRIPTION

( SOT-23 ) AFP2301AS 20V P-Channel Enhancement Mode MOSFET

FEATURES

● ID=-3.0A,RDS(ON)=90mΩ@VGS=-4.5V
● ID=-2.4A,RDS(ON)=110mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
● SOT-23 package design Application
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Net Working System Pin Define Pin 1 2 3 Symbol G S D

DESCRIPTION

Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2301ASS23RG S1YW SOT-23 ※ S1 parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFP2301ASS23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp.
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