Alfa-MOS AFP2301AS
20V P-Channel MOSFET
GENERAL DESCRIPTION
AFP2301AS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-23 ) AFP2301AS 20V P-Channel Enhancement Mode MOSFETFEATURES
● ID=-3.0A,RDS(ON)=90mΩ@VGS=-4.5V● ID=-2.4A,RDS(ON)=110mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
● SOT-23 package design Application
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Net Working System Pin Define Pin 1 2 3 Symbol G S D
DESCRIPTION
Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP2301ASS23RG S1YW SOT-23 ※ S1 parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFP2301ASS23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp.