AFP2309A Description
AFP2309A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP2309A 60V P-Channel Enhancement Mode MOSFET.
AFP2309A Key Features
- ID=-1.8A,RDS(ON)=190mΩ@VGS=-10V
- ID=-1.6A,RDS(ON)=230mΩ@VGS=-4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- SOT-23 package design
- Power Management in Note book
- LED Display
- DC-DC System
- LCD Panel