AFP2309A Datasheet | Alfa-MOS

Description AFP2309A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) 60V P-Channel Enhancement Mode MOSFET Features - ID=-1.8A,RDS(ON)=190mΩ@VGS=-10V - ID=-1.6A,RDS(ON)=230mΩ@VGS=-4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-23 package design Application - Power Management in Note book - LED Display - DC-DC System - LCD Panel Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP2309AS23RG 09YW SOT-23 ※ 09 parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFP2309AS23RG : 7” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.C Oct. 2022 Description Gate Source Drain Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page...