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AFP3447W - P-Channel MOSFET

This page provides the datasheet information for the AFP3447W, a member of the AFP3447W-Alfa P-Channel MOSFET family.

Description

AFP3447W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -120V/-1.0A,RDS(ON)=1.5Ω@VGS=-10V -120V/-0.5A,RDS(ON)=1.7Ω@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection Design SOT-23-6L package design.

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Datasheet Details

Part number AFP3447W
Manufacturer Alfa-MOS
File Size 574.21 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP3447W Datasheet
Additional preview pages of the AFP3447W datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP3447W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-6L ) AFP3447W 120V P-Channel Enhancement Mode MOSFET Features -120V/-1.0A,RDS(ON)=1.5Ω@VGS=-10V -120V/-0.5A,RDS(ON)=1.7Ω@VGS=-4.
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