AFP3447W Datasheet | Alfa-MOS

Description AFP3447W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-6L ) 120V P-Channel Enhancement Mode MOSFET Features -120V/-1.0A,RDS(ON)=1.5Ω@VGS=-10V -120V/-0.5A,RDS(ON)=1.7Ω@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection Design SOT-23-6L package design Application Active Clamp Circuits in DC/DC Power Supplies Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Description Drain Drain Gate Source Drain Drain Ordering Information Part Ordering No. Part Marking Package AFP3447WS26RG 47WYW SOT-23-6L ϡʳ 47W parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z...